IXFN520N075T2

Part NumberIXFN520N075T2

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFN520N075T2
Standard Package	10
Manufacturer	IXYS
Series	GigaMOS™, HiperFET™, TrenchT2™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	480A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	545nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	41000pF @ 25V
FET Feature	-
Power Dissipation (Max)	940W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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