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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2362ES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 30V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
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FDMS86520
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Diodes Incorporated, N-Channel 100V 40A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8,
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NTD5865NLT4G
ON Semiconductor, N-Channel 60V 46A (Tc) 71W (Tc) Surface Mount DPAK,
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STB7ANM60N
STMicroelectronics, N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK, MDmesh™ II
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IRF7480MTRPBF
Infineon Technologies, N-Channel 40V 217A (Tc) 96W (Tc) Surface Mount DirectFET™ Isometric ME, HEXFET®, StrongIRFET™
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STF3LN80K5
STMicroelectronics, N-Channel 800V 2A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ K5
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STFW69N65M5
STMicroelectronics, N-Channel 650V 58A (Tc) 79W (Tc) Through Hole ISOWATT-218FX, MDmesh™ V
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STP36N55M5
STMicroelectronics, N-Channel 550V 33A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ V
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TPN1R603PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSIX-H
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CSD19506KTT
Texas Instruments, N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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FDD6N50TM-WS
ON Semiconductor, N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount D-Pak, UniFET™
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