RW1E014SNT2R
RW1E014SNT2R
Part Number RW1E014SNT2R Description MOSFET N-CH 30V 1.4A WEMT6 Package / Case SOT-563, SOT-666Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 1.4A (Ta) 700mW (Ta) Surface Mount 6-WEMT
To learn about the specification of RW1E014SNT2R, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RW1E014SNT2R with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RW1E014SNT2R.
We are offering RW1E014SNT2R for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
RW1E014SNT2R - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RW1E014SN Standard Package 8000 Manufacturer Rohm Semiconductor Series - Packaging Tape & Reel (TR) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 240mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WEMT Package / Case SOT-563, SOT-666
RW1E014SNT2R - Related ProductsMore >>
APT28M120L Microsemi Corporation, N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole TO-264 [L], POWER MOS 8™
View
FCP4N60 ON Semiconductor, N-Channel 600V 3.9A (Tc) 50W (Tc) Through Hole TO-220-3, SuperFET™
View
IRFTS8342TRPBF Infineon Technologies, N-Channel 30V 8.2A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®
View
APT51M50J Microsemi Corporation, N-Channel 500V 51A (Tc) 480W (Tc) Chassis Mount ISOTOP®,
View
FDP7N60NZ ON Semiconductor, N-Channel 600V 6.5A (Tc) 147W (Tc) Through Hole TO-220-3, UniFET-II™
View
SUG90090E-GE3 Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®
View
NVR5198NLT1G ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
IRLML0060TRPBF Infineon Technologies, N-Channel 60V 2.7A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
NDB6060L ON Semiconductor, N-Channel 60V 48A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263AB),
View
STB4NK60Z-1 STMicroelectronics, N-Channel 600V 4A (Tc) 70W (Tc) Through Hole I2PAK, SuperMESH™
View
SI8800EDB-T2-E1 Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
STB32N65M5 STMicroelectronics, N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK, MDmesh™ V
View
RW1E014SNT2R - Tags
English
