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IXTP60N10T

IXTP60N10T

Part NumberIXTP60N10T

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 60A TO-220

DatasheetIXT(A,P)60N10T

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 176W (Tc) Through Hole TO-220AB

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IXTP60N10T - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(A,P)60N10T
Standard Package	50
Manufacturer	IXYS
Series	TrenchMV™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2650pF @ 25V
FET Feature	-
Power Dissipation (Max)	176W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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