Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2361ES-T1_GE3

SQ2361ES-T1_GE3

SQ2361ES-T1_GE3

Part NumberSQ2361ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 2.5A SSOT23

DatasheetSQ2361ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

To learn about the specification of SQ2361ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2361ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2361ES-T1_GE3.
We are offering SQ2361ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2361ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2361ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	177mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2361ES-T1_GE3 - Related Products

	BSS192,115	Nexperia USA Inc., P-Channel 240V 200mA (Ta) 560mW (Ta), 12.5W (Tc) Surface Mount SOT-89,	View
	STL8P4LLF6	STMicroelectronics, P-Channel 40V 2.9W (Ta) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ F6	View
	FQU17P06TU	ON Semiconductor, P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®	View
	FDMC6675BZ	ON Semiconductor, P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	FQB47P06TM-AM002	ON Semiconductor, P-Channel 60V 47A (Tc) 3.75W (Ta), 160W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	SI7633DP-T1-GE3	Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMP3125L-7	Diodes Incorporated, P-Channel 30V 2.5A (Ta) 650mW (Ta) Surface Mount SOT-23,	View
	SI8429DB-T1-E1	Vishay Siliconix, P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	IRF4905PBF	Infineon Technologies, P-Channel 55V 74A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	MIC94050YM4-TR	Microchip Technology, P-Channel 6V 1.8A (Ta) 568mW (Ta) Surface Mount SOT-143, SymFET™	View
	RZR025P01TL	Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	PMV32UP,215	Nexperia USA Inc., P-Channel 20V 4A (Ta) 510mW (Ta) Surface Mount TO-236AB,	View

SQ2361ES-T1_GE3 - Tags

SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 PDF SQ2361ES-T1_GE3 datasheet SQ2361ES-T1_GE3 specification SQ2361ES-T1_GE3 image SQ2361ES-T1_GE3 India Renesas Electronics India SQ2361ES-T1_GE3 buy SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 price SQ2361ES-T1_GE3 distributor SQ2361ES-T1_GE3 supplier SQ2361ES-T1_GE3 wholesales