SI4427BDY-T1-GE3
SI4427BDY-T1-GE3
Part Number SI4427BDY-T1-GE3 Description MOSFET P-CH 30V 9.7A 8SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO
To learn about the specification of SI4427BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4427BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4427BDY-T1-GE3.
We are offering SI4427BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4427BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4427BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 12.6A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4427BDY-T1-GE3 - Related ProductsMore >>
NTMS10P02R2G ON Semiconductor, P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC,
View
BSZ086P03NS3EGATMA1 Infineon Technologies, P-Channel 30V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
View
MCQ9435-TP Micro Commercial Co, P-Channel 30V 5.1A (Ta) 1.4W (Ta) Surface Mount 8-SOP,
View
MIC94053YC6-TR Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,
View
SI3433CDV-T1-E3 Vishay Siliconix, P-Channel 20V 6A (Tc) 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
CSD25310Q2T Texas Instruments, P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2), NexFET™
View
SSM3J168F,LF Toshiba Semiconductor and Storage, P-Channel 60V 400mA (Ta) 1.2W (Ta) Surface Mount S-Mini, U-MOSVI
View
SI2343DS-T1-E3 Vishay Siliconix, P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SQ7415AEN-T1_GE3 Vishay Siliconix, P-Channel 60V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
RQ1E070RPTR Rohm Semiconductor, P-Channel 30V 7A (Ta) 550mW (Ta) Surface Mount TSMT8,
View
IRF7726TRPBF Infineon Technologies, P-Channel 30V 7A (Ta) 1.79W (Ta) Surface Mount Micro8™, HEXFET®
View
TPC6111(TE85L,F,M) Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8), U-MOSV
View
SI4427BDY-T1-GE3 - Tags
English
