SQ2337ES-T1_GE3
SQ2337ES-T1_GE3
Part Number SQ2337ES-T1_GE3 Description MOSFET P-CHAN 80V SOT23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SQ2337ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2337ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2337ES-T1_GE3.
We are offering SQ2337ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQ2337ES-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2337ES Standard Package 3000 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 290mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V FET Feature - Power Dissipation (Max) 3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SQ2337ES-T1_GE3 - Related ProductsMore >>
FDMC2523P ON Semiconductor, P-Channel 150V 3A (Tc) 42W (Tc) Surface Mount 8-MLP (3.3x3.3), QFET®
View
NDP6020P ON Semiconductor, P-Channel 20V 24A (Tc) 60W (Tc) Through Hole TO-220-3,
View
SISS67DN-T1-GE3 Vishay Siliconix, P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen III
View
DMP1005UFDF-7 Diodes Incorporated, P-Channel 12V 26A (Tc) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F),
View
SUD40151EL-GE3 Vishay Siliconix, P-Channel 40V 42A (Tc) 50W (Tc) Surface Mount TO-252AA, TrenchFET® Gen IV
View
CPH3355-TL-W ON Semiconductor, P-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount 3-CPH,
View
IXTH90P10P IXYS, P-Channel 100V 90A (Tc) 462W (Tc) Through Hole TO-247 (IXTH), PolarP™
View
IRF9520NPBF Infineon Technologies, P-Channel 100V 6.8A (Tc) Through Hole TO-220AB, HEXFET®
View
BBS3002-TL-1E ON Semiconductor, P-Channel 60V 100A (Ta) 90W (Tc) Surface Mount D²PAK (TO-263),
View
STD35P6LLF6 STMicroelectronics, P-Channel 60V 35A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ F6
View
SI7129DN-T1-GE3 Vishay Siliconix, P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
TSM3401CX RFG Taiwan Semiconductor Corporation, P-Channel 30V 3A (Ta) 1.25W (Ta) Surface Mount SOT-23,
View
SQ2337ES-T1_GE3 - Tags
English
