IRF5210LPBF
IRF5210LPBF
Part Number IRF5210LPBF Description MOSFET P-CH 100V 38A TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262
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IRF5210LPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF5210(S,L)PbF Standard Package 1000 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 170W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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