Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7117DN-T1-GE3

SI7117DN-T1-GE3

SI7117DN-T1-GE3

Part NumberSI7117DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 2.17A 1212-8

DatasheetSI7117DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SI7117DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7117DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7117DN-T1-GE3.
We are offering SI7117DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7117DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7117DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 12.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SI7117DN-T1-GE3 - Related Products

	RZM002P02T2L	Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,	View
	IRFR9120PBF	Vishay Siliconix, P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SUP53P06-20-E3	Vishay Siliconix, P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB, TrenchFET®	View
	ZXMP10A18GTA	Diodes Incorporated, P-Channel 100V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	TSM3481CX6 RFG	Taiwan Semiconductor Corporation, P-Channel 30V 5.7A (Ta) 1.6W (Ta) Surface Mount SOT-26,	View
	SI2369DS-T1-GE3	Vishay Siliconix, P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236, TrenchFET®	View
	SI4447DY-T1-E3	Vishay Siliconix, P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO, TrenchFET®	View
	PMPB27EP,115	Nexperia USA Inc., P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,	View
	BSP322PH6327XTSA1	Infineon Technologies, P-Channel 100V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	PMV48XPAR	Nexperia USA Inc., P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB,	View
	FDG328P	ON Semiconductor, P-Channel 20V 1.5A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	SSM6J214FE(TE85L,F	Toshiba Semiconductor and Storage, P-Channel 30V 3.6A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI	View

SI7117DN-T1-GE3 - Tags

SI7117DN-T1-GE3 SI7117DN-T1-GE3 PDF SI7117DN-T1-GE3 datasheet SI7117DN-T1-GE3 specification SI7117DN-T1-GE3 image SI7117DN-T1-GE3 India Renesas Electronics India SI7117DN-T1-GE3 buy SI7117DN-T1-GE3 SI7117DN-T1-GE3 price SI7117DN-T1-GE3 distributor SI7117DN-T1-GE3 supplier SI7117DN-T1-GE3 wholesales