SQ2325ES-T1_GE3


SQ2325ES-T1_GE3

Part NumberSQ2325ES-T1_GE3

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SQ2325ES-T1_GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 50V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 175°C (TA)
Mounting TypeSurface Mount
Supplier Device PackageTO-236 (SOT-23)
Package / CaseTO-236-3, SC-59, SOT-23-3

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SQ2325ES-T1_GE3 - Tags

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