SQ2325ES-T1_GE3
SQ2325ES-T1_GE3
Part Number SQ2325ES-T1_GE3
Description MOSFET P-CH 150V 840MA TO236
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description P-Channel 150V 840mA (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)
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SQ2325ES-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2325ES
Standard Package 3000
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 50V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TA)
Mounting Type Surface Mount
Supplier Device Package TO-236 (SOT-23)
Package / Case TO-236-3, SC-59, SOT-23-3
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SQ2325ES-T1_GE3 - Tags