SI2301BDS-T1-E3
SI2301BDS-T1-E3
Part Number SI2301BDS-T1-E3 Description MOSFET P-CH 20V 2.2A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2301BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301BDS-T1-E3.
We are offering SI2301BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2301BDS-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2301BDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 100mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 375pF @ 6V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2301BDS-T1-E3 - Related ProductsMore >>
SI6415DQ-T1-GE3 Vishay Siliconix, P-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP, TrenchFET®
View
RZL025P01TR Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 1W (Ta) Surface Mount TUMT6,
View
TPN4R712MD,L1Q Toshiba Semiconductor and Storage, P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVI
View
2SJ305TE85LF Toshiba Semiconductor and Storage, P-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,
View
NVATS5A106PLZT4G ON Semiconductor, P-Channel 40V 33A (Ta) 48W (Tc) Surface Mount ATPAK,
View
NVTR01P02LT1G ON Semiconductor, P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3,
View
CSD23203WT Texas Instruments, P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™
View
SI7439DP-T1-E3 Vishay Siliconix, P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SI4435DY ON Semiconductor, P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
DMP4013LFG-7 Diodes Incorporated, P-Channel 40V 10.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,
View
CXDM4060P TR Central Semiconductor Corp, P-Channel 40V 6A (Ta) 1.2W (Ta) Surface Mount SOT-89,
View
BSR316PH6327XTSA1 Infineon Technologies, P-Channel 100V 360mA (Ta) 500mW (Tc) Surface Mount PG-SC-59, SIPMOS®
View
SI2301BDS-T1-E3 - Tags
English
