FDN336P
FDN336P
Part Number FDN336P Description MOSFET P-CH 20V 1.3A SSOT3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
To learn about the specification of FDN336P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDN336P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDN336P.
We are offering FDN336P for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDN336P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDN336P Standard Package 3000 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3
BSP171PH6327XTSA1 Infineon Technologies, P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
SI8409DB-T1-E1 Vishay Siliconix, P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
PMZ320UPEYL Nexperia USA Inc., P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006-3,
View
CSD23203W Texas Instruments, P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™
View
SI4401BDY-T1-E3 Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
BSR315PH6327XTSA1 Infineon Technologies, P-Channel 60V 620mA (Ta) 500mW (Ta) Surface Mount PG-SC-59, SIPMOS®
View
VP3203N8-G Microchip Technology, P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
SUM90P10-19L-E3 Vishay Siliconix, P-Channel 100V 90A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
IRF9Z14PBF Vishay Siliconix, P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB,
View
IXTR170P10P IXYS, P-Channel 100V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™, PolarP™
View
TSM650P02CX RFG Taiwan Semiconductor Corporation, P-Channel 20V 4.1A (Tc) 1.56W (Tc) Surface Mount SOT-23,
View
SSM3J35CTC,L3F Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII
View
FDN336P - Tags
English
