Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

Part NumberSQ2318AES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 40V SOT23

DatasheetSQ2318AES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2318AES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2318AES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2318AES-T1_GE3.
We are offering SQ2318AES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2318AES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2318AES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	555pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2318AES-T1_GE3 - Related Products

	SIRA10BDP-T1-GE3	Vishay Siliconix, N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	NTK3134NT1G	ON Semiconductor, N-Channel 20V 750mA (Ta) 310mW (Ta) Surface Mount SOT-723,	View
	IPB60R199CPATMA1	Infineon Technologies, N-Channel 650V 16A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™	View
	2N7002T-TP	Micro Commercial Co, N-Channel 60V 115mA 150mW Surface Mount SOT-523,	View
	STD7NK40ZT4	STMicroelectronics, N-Channel 400V 5.4A (Tc) 70W (Tc) Surface Mount DPAK, SuperMESH™	View
	STP2NK90Z	STMicroelectronics, N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole TO-220AB, SuperMESH™	View
	STP24NF10	STMicroelectronics, N-Channel 100V 26A (Tc) 85W (Tc) Through Hole TO-220AB, STripFET™ II	View
	SIRA14BDP-T1-GE3	Vishay Siliconix, N-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SIR186DP-T1-RE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	IRLZ44NPBF	Infineon Technologies, N-Channel 55V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-220AB, HEXFET®	View
	DMN31D5UFZ-7B	Diodes Incorporated, N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3,	View
	IRLZ24NSTRLPBF	Infineon Technologies, N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK, HEXFET®	View

SQ2318AES-T1_GE3 - Tags

SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 PDF SQ2318AES-T1_GE3 datasheet SQ2318AES-T1_GE3 specification SQ2318AES-T1_GE3 image SQ2318AES-T1_GE3 India Renesas Electronics India SQ2318AES-T1_GE3 buy SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 price SQ2318AES-T1_GE3 distributor SQ2318AES-T1_GE3 supplier SQ2318AES-T1_GE3 wholesales