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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB107N20N3 G,IPx110N20N3 G Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 88A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN015-60PS,127 Nexperia USA Inc., N-Channel 60V 50A (Tc) 86W (Tc) Through Hole TO-220AB,
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IPP030N10N5AKSA1 Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3, OptiMOS™
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NTMFS4946NT1G ON Semiconductor, N-Channel 30V 12.7A (Ta), 100A (Tc) 890mW (Ta), 55.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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IRL510STRLPBF Vishay Siliconix, N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,
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FQNL2N50BTA ON Semiconductor, N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3, QFET®
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STB30NF20 STMicroelectronics, N-Channel 200V 30A (Tc) 125W (Tc) Surface Mount D2PAK, STripFET™
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FCP165N65S3 ON Semiconductor, N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3, SuperFET® III
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PSMN011-100YSFX Nexperia USA Inc., N-Channel 100V 79.5A (Ta) 152W (Ta) Surface Mount LFPAK56, Power-SO8,
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STU6N62K3 STMicroelectronics, N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole I-PAK, SuperMESH3™
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IRF1404STRLPBF Infineon Technologies, N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®
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SIR404DP-T1-GE3 Vishay Siliconix, N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IRF7490TRPBF Infineon Technologies, N-Channel 100V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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