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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB107N20N3 G,IPx110N20N3 G Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 88A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ44NPBF Infineon Technologies, N-Channel 55V 49A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®
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STB30N65M5 STMicroelectronics, N-Channel 650V 22A (Tc) 140W (Tc) Surface Mount D2PAK, MDmesh™ V
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STD6N95K5 STMicroelectronics, N-Channel 950V 9A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH5™
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TSM5NC50CP ROG Taiwan Semiconductor Corporation, N-Channel 500V 5A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),
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IRLR2703TRPBF Infineon Technologies, N-Channel 30V 23A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
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STW24NM60N STMicroelectronics, N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-247, MDmesh™ II
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IXFP90N20X3 IXYS, N-Channel 200V 90A (Tc) 390W (Tc) Through Hole TO-220, HiPerFET™
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STW18N60DM2 STMicroelectronics, N-Channel 600V 12A (Tc) 90W (Tc) Through Hole TO-247, MDmesh™ DM2
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NVTFS5C466NLWFTAG ON Semiconductor, N-Channel 40V 51A (Tc) 38W (Tc) Surface Mount 8-WDFN (3.3x3.3), Automotive, AEC-Q101
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SI2314EDS-T1-E3 Vishay Siliconix, N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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IRFH8321TRPBF Infineon Technologies, N-Channel 30V 21A (Ta), 83A (Tc) 3.4W (Ta), 54W (Tc) Surface Mount PQFN (5x6), HEXFET®
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IXFB150N65X2 IXYS, N-Channel 650V 150A (Tc) 1560W (Tc) Through Hole PLUS264™, HiPerFET™
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