Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB107N20N3 G,IPx110N20N3 G
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP191NQ06LT,127
Nexperia USA Inc., N-Channel 55V 75A (Tc) 300W (Tc) Through Hole TO-220AB, TrenchMOS™
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BSC0902NSIATMA1
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DMN6040SFDE-7
Diodes Incorporated, N-Channel 60V 5.3A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),
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DMN2065UW-7
Diodes Incorporated, N-Channel 20V 2.8A (Ta) 430mW (Ta) Surface Mount SOT-323,
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PSMN063-150D,118
Nexperia USA Inc., N-Channel 150V 29A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™
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SSM3K62TU,LF
Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 1W (Ta) Surface Mount UFM, U-MOSVII-H
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IRF6662TRPBF
Infineon Technologies, N-Channel 100V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ, HEXFET®
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FDP2614
ON Semiconductor, N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3, PowerTrench®
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TK17A80W,S4X
Toshiba Semiconductor and Storage, N-Channel 800V 17A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSIV
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BSP126,135
Nexperia USA Inc., N-Channel 250V 375mA (Ta) 1.5W (Ta) Surface Mount SC-73,
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CSD18502Q5B
Texas Instruments, N-Channel 40V 26A (Ta), 100A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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SI4686DY-T1-GE3
Vishay Siliconix, N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SO, TrenchFET®, WFET®
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