Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

Part NumberSQ2301ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.9A TO236

DatasheetSQ2301ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2301ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2301ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2301ES-T1_GE3.
We are offering SQ2301ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2301ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2301ES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2301ES-T1_GE3 - Related Products

	DMP3036SFG-7	Diodes Incorporated, P-Channel 30V 8.7A (Ta) 950mW (Ta) Surface Mount PowerDI3333-8,	View
	AON2403	Alpha & Omega Semiconductor Inc., P-Channel 12V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),	View
	IRF9Z34STRRPBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View
	SI7489DP-T1-E3	Vishay Siliconix, P-Channel 100V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI7613DN-T1-GE3	Vishay Siliconix, P-Channel 20V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXTT20P50P	IXYS, P-Channel 500V 20A (Tc) 460W (Tc) Surface Mount TO-268, PolarP™	View
	FDME910PZT	ON Semiconductor, P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®	View
	ES6U1T2R	Rohm Semiconductor, P-Channel 12V 1.3A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	FDS4465	ON Semiconductor, P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	RRH140P03GZETB	Rohm Semiconductor, P-Channel 30V 14A (Ta) 650mW (Ta) Surface Mount 8-SOP,	View
	SI7309DN-T1-GE3	Vishay Siliconix, P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FDN308P	ON Semiconductor, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View

SQ2301ES-T1_GE3 - Tags

SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 PDF SQ2301ES-T1_GE3 datasheet SQ2301ES-T1_GE3 specification SQ2301ES-T1_GE3 image SQ2301ES-T1_GE3 India Renesas Electronics India SQ2301ES-T1_GE3 buy SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 price SQ2301ES-T1_GE3 distributor SQ2301ES-T1_GE3 supplier SQ2301ES-T1_GE3 wholesales