SPB18P06PGATMA1
SPB18P06PGATMA1
Part Number SPB18P06PGATMA1
Description MOSFET P-CH 60V 18.7A TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount D²PAK (TO-263AB)
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SPB18P06PGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPB18P06P G
Standard Package 1000
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
FET Feature -
Power Dissipation (Max) 81.1W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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