BSP316PH6327XTSA1
BSP316PH6327XTSA1
Part Number BSP316PH6327XTSA1
Description MOSFET P-CH 100V 0.68A SOT223
Package / Case TO-261-4, TO-261AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 100V 680mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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BSP316PH6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSP316P
Standard Package 1000
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id 2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
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