Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS06DN-T1-GE3

SISS06DN-T1-GE3

SISS06DN-T1-GE3

Part NumberSISS06DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30 V POWERPAK 1212

DatasheetSISS06DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 47.6A (Ta), 172.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS06DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS06DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS06DN-T1-GE3.
We are offering SISS06DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS06DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS06DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	47.6A (Ta), 172.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.38mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3660pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS06DN-T1-GE3 - Related Products

	ZVN3306FTA	Diodes Incorporated, N-Channel 60V 150mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	TSM4NB60CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),	View
	DMN2230UQ-7	Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23,	View
	FDB3632-F085	ON Semiconductor, N-Channel 100V 12A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	PSMN3R0-60ES,127	Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Through Hole I2PAK,	View
	SIHG80N60EF-GE3	Vishay Siliconix, N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC, EF	View
	SIHG47N60E-GE3	Vishay Siliconix, N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AC,	View
	DMJ7N70SK3-13	Diodes Incorporated, N-Channel 700V 3.9A (Tc) 28W (Tc) Surface Mount TO-252,	View
	BSS139H6327XTSA1	Infineon Technologies, N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	AO3404A	Alpha & Omega Semiconductor Inc., N-Channel 30V 5.8A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	BUK9Y72-80E,115	Nexperia USA Inc., N-Channel 80V 15A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	FQD5N20LTM	ON Semiconductor, N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak, QFET®	View

SISS06DN-T1-GE3 - Tags

SISS06DN-T1-GE3 SISS06DN-T1-GE3 PDF SISS06DN-T1-GE3 datasheet SISS06DN-T1-GE3 specification SISS06DN-T1-GE3 image SISS06DN-T1-GE3 India Renesas Electronics India SISS06DN-T1-GE3 buy SISS06DN-T1-GE3 SISS06DN-T1-GE3 price SISS06DN-T1-GE3 distributor SISS06DN-T1-GE3 supplier SISS06DN-T1-GE3 wholesales