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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK6607-55C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5160pF @ 25V
FET Feature -
Power Dissipation (Max) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN017-30EL,127
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SQD50N04-5M6_T4GE3
Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
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Nexperia USA Inc., N-Channel 30V 100A (Tc) 215W (Tc) Surface Mount LFPAK56, Power-SO8,
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STMicroelectronics, N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole ISOWATT-218FX, PowerMESH™
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