NTMFS6H818NT1G

Part NumberNTMFS6H818NT1G

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTMFS6H818N
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 40V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads

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