Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISA26DN-T1-GE3

SISA26DN-T1-GE3

SISA26DN-T1-GE3

Part NumberSISA26DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POWERPAK1212

DatasheetSISA26DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISA26DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA26DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA26DN-T1-GE3.
We are offering SISA26DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISA26DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA26DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	2247pF @ 10V
FET Feature	-
Power Dissipation (Max)	39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISA26DN-T1-GE3 - Related Products

	SI7434ADP-T1-RE3	Vishay Siliconix, N-Channel 250V 3.7A (Ta), 12.3A (Tc) 5W (Ta), 54.3W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	AO3402	Alpha & Omega Semiconductor Inc., N-Channel 30V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	STB18NM60ND	STMicroelectronics, N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D2PAK, FDmesh™ II	View
	IRFP260NPBF	Infineon Technologies, N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AC, HEXFET®	View
	DMN61D9UW-7	Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,	View
	PMZ390UN,315	Nexperia USA Inc., N-Channel 30V 1.78A (Tc) 2.5W (Tc) Surface Mount DFN1006-3, TrenchMOS™	View
	R6024KNJTL	Rohm Semiconductor, N-Channel 600V 24A (Tc) 245W (Tc) Surface Mount LPTS,	View
	IRF300P226	Infineon Technologies, Through Hole TO-247AC,	View
	STL90N10F7	STMicroelectronics, N-Channel 100V 70A (Tc) 5W (Ta), 100W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII	View
	NTK3134NT1G	ON Semiconductor, N-Channel 20V 750mA (Ta) 310mW (Ta) Surface Mount SOT-723,	View
	SIUD406ED-T1-GE3	Vishay Siliconix, N-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET®	View
	BUK92150-55A,118	Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View

SISA26DN-T1-GE3 - Tags

SISA26DN-T1-GE3 SISA26DN-T1-GE3 PDF SISA26DN-T1-GE3 datasheet SISA26DN-T1-GE3 specification SISA26DN-T1-GE3 image SISA26DN-T1-GE3 India Renesas Electronics India SISA26DN-T1-GE3 buy SISA26DN-T1-GE3 SISA26DN-T1-GE3 price SISA26DN-T1-GE3 distributor SISA26DN-T1-GE3 supplier SISA26DN-T1-GE3 wholesales