Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISA26DN-T1-GE3

SISA26DN-T1-GE3

SISA26DN-T1-GE3

Part NumberSISA26DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POWERPAK1212

DatasheetSISA26DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISA26DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA26DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA26DN-T1-GE3.
We are offering SISA26DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISA26DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA26DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	2247pF @ 10V
FET Feature	-
Power Dissipation (Max)	39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISA26DN-T1-GE3 - Related Products

	IRFH5302TRPBF	Infineon Technologies, N-Channel 30V 32A (Ta), 100A (Tc) 3.6W (Ta), 100W (Tc) Surface Mount PQFN (5x6) Single Die, HEXFET®	View
	NVB072N65S3	ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D2PAK-3 (TO-263), Automotive, AEC-Q101, SuperFET® III, FRFET®	View
	APT34N80B2C3G	Microsemi Corporation, N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2],	View
	FDP18N20F	ON Semiconductor, N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-220-3, UniFET™	View
	PSMN7R6-100BSEJ	Nexperia USA Inc., N-Channel 100V 75A (Tj) 296W (Tc) Surface Mount D2PAK,	View
	NTHS4166NT1G	ON Semiconductor, N-Channel 30V 4.9A (Ta) 800mW (Ta) Surface Mount ChipFET™,	View
	FDMS86568-F085	ON Semiconductor, N-Channel 60V 80A (Tc) 214W (Tj) Surface Mount Power56, Automotive, AEC-Q101, PowerTrench®	View
	STB80NF10T4	STMicroelectronics, N-Channel 100V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II	View
	IPB60R099CPATMA1	Infineon Technologies, N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™	View
	IRFIZ14GPBF	Vishay Siliconix, N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3,	View
	IPSA70R750P7SAKMA1	Infineon Technologies, N-Channel 700V 6.5A (Tc) 34.7W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	IRF8714TRPBF	Infineon Technologies, N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View

SISA26DN-T1-GE3 - Tags

SISA26DN-T1-GE3 SISA26DN-T1-GE3 PDF SISA26DN-T1-GE3 datasheet SISA26DN-T1-GE3 specification SISA26DN-T1-GE3 image SISA26DN-T1-GE3 India Renesas Electronics India SISA26DN-T1-GE3 buy SISA26DN-T1-GE3 SISA26DN-T1-GE3 price SISA26DN-T1-GE3 distributor SISA26DN-T1-GE3 supplier SISA26DN-T1-GE3 wholesales