IXFH120N30X3

Part NumberIXFH120N30X3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFH120N30X3, IXFT120N30X3HV
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10.5nF @ 25V
FET Feature	-
Power Dissipation (Max)	735W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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FDMC86240	ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
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STL180N6F7	STMicroelectronics, N-Channel 60V 32A (Ta), 120A (Tc) 4.8W (Ta), 166W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
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SIRA12DP-T1-GE3	Vishay Siliconix, N-Channel 30V 25A (Tc) 4.5W (Ta), 31W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
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