Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISA18ADN-T1-GE3

SISA18ADN-T1-GE3

SISA18ADN-T1-GE3

Part NumberSISA18ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 38.3A 1212-8

DatasheetSISA18ADN-T1-GE3

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SISA18ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA18ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA18ADN-T1-GE3.
We are offering SISA18ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISA18ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA18ADN-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	38.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 19.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SISA18ADN-T1-GE3 - Related Products

	FDPF13N50FT	ON Semiconductor, N-Channel 500V 12A (Tc) 42W (Tc) Through Hole TO-220F, UniFET™	View
	TPH2900ENH,L1Q	Toshiba Semiconductor and Storage, N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	SPD04N60C3ATMA1	Infineon Technologies, N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
	IPD80R750P7ATMA1	Infineon Technologies, N-Channel 800V 7A (Tc) 51W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	FDG327NZ	ON Semiconductor, N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	SQD40N06-14L_GE3	Vishay Siliconix, N-Channel 60V 40A (Tc) 75W (Tc) Surface Mount TO-252AA, TrenchFET®	View
	PSMN1R2-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 172W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	R6020KNJTL	Rohm Semiconductor, N-Channel 600V 20A (Tc) 231W (Tc) Surface Mount TO-263,	View
	FDB2552	ON Semiconductor, N-Channel 150V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	SIHU4N80E-GE3	Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251),	View
	VS-FC270SA20	Vishay Semiconductor Diodes Division, N-Channel 200V 287A (Tc) 937W (Tc) Chassis Mount SOT-227,	View
	IRL3705NSTRLPBF	Infineon Technologies, N-Channel 55V 89A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View

SISA18ADN-T1-GE3 - Tags

SISA18ADN-T1-GE3 SISA18ADN-T1-GE3 PDF SISA18ADN-T1-GE3 datasheet SISA18ADN-T1-GE3 specification SISA18ADN-T1-GE3 image SISA18ADN-T1-GE3 India Renesas Electronics India SISA18ADN-T1-GE3 buy SISA18ADN-T1-GE3 SISA18ADN-T1-GE3 price SISA18ADN-T1-GE3 distributor SISA18ADN-T1-GE3 supplier SISA18ADN-T1-GE3 wholesales