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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
CSD17577Q5A
Texas Instruments, N-Channel 30V 60A (Ta) 3W (Ta), 53W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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FCP150N65F
ON Semiconductor, N-Channel 650V 24A (Tc) 298W (Tc) Through Hole TO-220-3, HiPerFET™, Polar™
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RF6E045AJTCR
Rohm Semiconductor, N-Channel 30V 4.5A (Ta) 1W (Tc) Surface Mount TUMT6,
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BSC052N08NS5ATMA1
Infineon Technologies, N-Channel 80V 95A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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R6011KNJTL
Rohm Semiconductor, N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-263,
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IRFU2405PBF
Infineon Technologies, N-Channel 55V 56A (Tc) 110W (Tc) Through Hole IPAK (TO-251), HEXFET®
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SI7112DN-T1-GE3
Vishay Siliconix, N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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RS1E130GNTB
Rohm Semiconductor, N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface Mount 8-HSOP,
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SIHG24N65E-GE3
Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-247AC,
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SI5448DU-T1-GE3
Vishay Siliconix, N-Channel 40V 25A (Tc) 31W (Tc) Surface Mount PowerPAK® ChipFet Single, TrenchFET®
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CSD17303Q5
Texas Instruments, N-Channel 30V 32A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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IXTH2N300P3HV
IXYS, N-Channel 3000V 2A (Tc) 520W (Tc) Through Hole TO-247HV,
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