IPSA70R2K0CEAKMA1
IPSA70R2K0CEAKMA1
Part Number IPSA70R2K0CEAKMA1 Description MOSFET N-CHANNEL 700V 4A IPAK Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 700V 4A (Tc) 42W (Tc) Through Hole PG-TO251-3
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IPSA70R2K0CEAKMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPSA70R2K0CE Standard Package 1500 Manufacturer Infineon Technologies Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 163pF @ 100V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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