Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

Part NumberSIS892ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 28A PPAK 1212

DatasheetSiS892ADN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892ADN-T1-GE3.
We are offering SIS892ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiS892ADN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892ADN-T1-GE3 - Related Products

	FDBL0630N150	ON Semiconductor, N-Channel 150V 169A (Tc) 500W (Tj) Surface Mount 8-HPSOF, PowerTrench®	View
	FDMS86101	ON Semiconductor, N-Channel 100V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SIHP12N60E-GE3	Vishay Siliconix, N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB,	View
	IRFR3518TRPBF	Infineon Technologies, N-Channel 80V 38A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	IPA60R380C6XKSA1	Infineon Technologies, N-Channel 600V 10.6A (Tc) 31W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	R6035ENZC8	Rohm Semiconductor, N-Channel 600V 35A (Tc) 120W (Tc) Through Hole TO-3PF,	View
	DMT5015LFDF-7	Diodes Incorporated, N-Channel 50V 9.1A (Ta) 820mW (Ta) Surface Mount 6-UDFN2020 (2x2),	View
	IPD50N04S408ATMA1	Infineon Technologies, N-Channel 40V 50A (Tc) 46W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	IRFP054NPBF	Infineon Technologies, N-Channel 55V 81A (Tc) 170W (Tc) Through Hole TO-247AC, HEXFET®	View
	AOD454A	Alpha & Omega Semiconductor Inc., N-Channel 40V 20A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount TO-252, (D-Pak),	View
	FDMT800150DC	ON Semiconductor, N-Channel 150V 15A (Ta), 99A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-Dual Cool™88, Dual Cool™, PowerTrench®	View
	BSS159NH6906XTSA1	Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View

SIS892ADN-T1-GE3 - Tags

SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 PDF SIS892ADN-T1-GE3 datasheet SIS892ADN-T1-GE3 specification SIS892ADN-T1-GE3 image SIS892ADN-T1-GE3 India Renesas Electronics India SIS892ADN-T1-GE3 buy SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 price SIS892ADN-T1-GE3 distributor SIS892ADN-T1-GE3 supplier SIS892ADN-T1-GE3 wholesales