FDS5690
FDS5690
Part Number FDS5690
Description MOSFET N-CH 60V 7A 8SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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FDS5690 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDS5690
Standard Package 2500
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1107pF @ 30V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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Infineon Technologies, N-Channel 120V 56A (Ta) 107W (Tc) Through Hole PG-TO220-3, OptiMOS™
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FDS5690 - Tags