Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS862DN-T1-GE3

SIS862DN-T1-GE3

SIS862DN-T1-GE3

Part NumberSIS862DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 40A 1212

DatasheetSIS862DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS862DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS862DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS862DN-T1-GE3.
We are offering SIS862DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS862DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS862DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 30V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS862DN-T1-GE3 - Related Products

	SI7636DP-T1-E3	Vishay Siliconix, N-Channel 30V 17A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BUK9624-55A,118	Nexperia USA Inc., N-Channel 55V 46A (Tc) 105W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SIR690DP-T1-GE3	Vishay Siliconix, N-Channel 200V 34.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	IPZ40N04S53R1ATMA1	Infineon Technologies, N-Channel 40V 40A (Tc) 71W (Tc) Surface Mount PG-TSDSON-8, Automotive, AEC-Q101, OptiMOS™	View
	STP7NK80Z	STMicroelectronics, N-Channel 800V 5.2A (Tc) 125W (Tc) Through Hole TO-220AB, SuperMESH™	View
	SI4168DY-T1-GE3	Vishay Siliconix, N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	CSD18510KTT	Texas Instruments, N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3, NexFET™	View
	IPB019N08N3GATMA1	Infineon Technologies, N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	CSD17505Q5A	Texas Instruments, N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	SIR872DP-T1-GE3	Vishay Siliconix, N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	RDD050N20TL	Rohm Semiconductor, N-Channel 200V 5A (Ta) 20W (Tc) Surface Mount CPT3,	View
	SI7370DP-T1-GE3	Vishay Siliconix, N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount, TrenchFET®	View

SIS862DN-T1-GE3 - Tags

SIS862DN-T1-GE3 SIS862DN-T1-GE3 PDF SIS862DN-T1-GE3 datasheet SIS862DN-T1-GE3 specification SIS862DN-T1-GE3 image SIS862DN-T1-GE3 India Renesas Electronics India SIS862DN-T1-GE3 buy SIS862DN-T1-GE3 SIS862DN-T1-GE3 price SIS862DN-T1-GE3 distributor SIS862DN-T1-GE3 supplier SIS862DN-T1-GE3 wholesales