Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3

Part NumberSIRA14BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30-V POWERPAK SO-8

DatasheetSiRA14BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA14BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA14BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA14BDP-T1-GE3.
We are offering SIRA14BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA14BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiRA14BDP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	917pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA14BDP-T1-GE3 - Related Products

	IRLI3705NPBF	Infineon Technologies, N-Channel 55V 52A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	IPD60N10S4L12ATMA1	Infineon Technologies, N-Channel 100V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, HEXFET®	View
	IPP80R360P7XKSA1	Infineon Technologies, N-Channel 800V 13A (Tc) 84W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7	View
	FDMS7660AS	ON Semiconductor, N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	IRFB5620PBF	Infineon Technologies, N-Channel 200V 25A (Tc) 144W (Tc) Through Hole TO-220AB,	View
	BSZ100N06NSATMA1	Infineon Technologies, N-Channel 60V 40A (Tc) 2.1W (Ta), 36W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	STD15NF10T4	STMicroelectronics, N-Channel 100V 23A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ II	View
	BS170P	Diodes Incorporated, N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3,	View
	FQPF16N25C	ON Semiconductor, N-Channel 250V 15.6A (Tc) 43W (Tc) Through Hole TO-220F, QFET®	View
	VN2106N3-G	Microchip Technology, N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	FDD8782	ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	SIHF30N60E-GE3	Vishay Siliconix, N-Channel 600V 29A (Tc) 37W (Tc) Through Hole,	View

SIRA14BDP-T1-GE3 - Tags

SIRA14BDP-T1-GE3 SIRA14BDP-T1-GE3 PDF SIRA14BDP-T1-GE3 datasheet SIRA14BDP-T1-GE3 specification SIRA14BDP-T1-GE3 image SIRA14BDP-T1-GE3 India Renesas Electronics India SIRA14BDP-T1-GE3 buy SIRA14BDP-T1-GE3 SIRA14BDP-T1-GE3 price SIRA14BDP-T1-GE3 distributor SIRA14BDP-T1-GE3 supplier SIRA14BDP-T1-GE3 wholesales