SIR690DP-T1-GE3

Part NumberSIR690DP-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR690DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	34.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 7.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1935pF @ 100V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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SIR460DP-T1-GE3	Vishay Siliconix, N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
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BUK7212-55B,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
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IRF7821TRPBF	Infineon Technologies, N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
NTMFS4935NT3G	ON Semiconductor, N-Channel 30V 13A (Ta), 93A (Tc) 930mW (Ta), 48W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View