BSS806NH6327XTSA1
BSS806NH6327XTSA1
Part Number BSS806NH6327XTSA1
Description MOSFET N-CH 20V 2.3A SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
To learn about the specification of BSS806NH6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSS806NH6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSS806NH6327XTSA1.
We are offering BSS806NH6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSS806NH6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS806N
Standard Package 3000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
BSS806NH6327XTSA1 - Related ProductsMore >>
R6020ENX
Rohm Semiconductor, N-Channel 600V 20A (Tc) 50W (Tc) Through Hole TO-220FM,
View
IXFK240N15T2
IXYS, N-Channel 150V 240A (Tc) 1250W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™
View
IXFT220N20X3HV
IXYS, N-Channel 200V 220A (Tc) 960W (Tc) Surface Mount TO-268HV, HiPerFET™
View
IPI040N06N3GXKSA1
Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Through Hole PG-TO262-3, OptiMOS™
View
FDD7N25LZTM
ON Semiconductor, N-Channel 250V 6.2A (Tc) 56W (Tc) Surface Mount D-Pak, UniFET™
View
DMN62D1SFB-7B
Diodes Incorporated, N-Channel 60V 410mA (Ta) 470mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
IXTH62N65X2
IXYS, N-Channel 650V 62A (Tc) 780W (Tc) Through Hole TO-247,
View
SIHP120N60E-GE3
Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Through Hole TO-220AB,
View
PMPB12UNEX
Nexperia USA Inc., N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6,
View
2N7002KW
ON Semiconductor, N-Channel 60V 310mA (Ta) 350mW (Ta) Surface Mount SC-70 (SOT323),
View
TPN13008NH,L1Q
Toshiba Semiconductor and Storage, N-Channel 80V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
IPB120N04S402ATMA1
Infineon Technologies, N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
BSS806NH6327XTSA1 - Tags