SIHH24N65E-T1-GE3
SIHH24N65E-T1-GE3
Part Number SIHH24N65E-T1-GE3
Description MOSFET N-CHAN 650V 23A POWERPAK
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 23A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8
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SIHH24N65E-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHH24N65E
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2814pF @ 100V
FET Feature -
Power Dissipation (Max) 202W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
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