Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR410DP-T1-GE3

SIR410DP-T1-GE3

SIR410DP-T1-GE3

Part NumberSIR410DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK SO-8

DatasheetSIR410DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR410DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR410DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR410DP-T1-GE3.
We are offering SIR410DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR410DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR410DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	4.2W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR410DP-T1-GE3 - Related Products

	IPB020N10N5ATMA1	Infineon Technologies, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	NTTFS4C05NTAG	ON Semiconductor, N-Channel 30V 12A (Ta), 75A (Tc) 820mW (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IRF3710STRLPBF	Infineon Technologies, N-Channel 100V 57A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	PSMN1R5-30YLC,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 179W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFB23N15DPBF	Infineon Technologies, N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB, HEXFET®	View
	IRFP150PBF	Vishay Siliconix, N-Channel 100V 41A (Tc) 230W (Tc) Through Hole TO-247-3,	View
	IRF7470TRPBF	Infineon Technologies, N-Channel 40V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SSM3K116TU,LF	Toshiba Semiconductor and Storage, N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII	View
	PSMN017-80PS,127	Nexperia USA Inc., N-Channel 80V 50A (Tc) 103W (Tc) Through Hole TO-220AB,	View
	IAUC120N04S6L008ATMA1	Infineon Technologies, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-33, Automotive, AEC-Q101, OptiMOS™	View
	R6004KNJTL	Rohm Semiconductor, N-Channel 600V 4A (Tc) 58W (Tc) Surface Mount TO-263,	View
	BUK9Y22-30B,115	Nexperia USA Inc., N-Channel 30V 37.7A (Tc) 59.4W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View

SIR410DP-T1-GE3 - Tags

SIR410DP-T1-GE3 SIR410DP-T1-GE3 PDF SIR410DP-T1-GE3 datasheet SIR410DP-T1-GE3 specification SIR410DP-T1-GE3 image SIR410DP-T1-GE3 India Renesas Electronics India SIR410DP-T1-GE3 buy SIR410DP-T1-GE3 SIR410DP-T1-GE3 price SIR410DP-T1-GE3 distributor SIR410DP-T1-GE3 supplier SIR410DP-T1-GE3 wholesales