Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTX6N200P3HV

IXTX6N200P3HV

IXTX6N200P3HV

Part NumberIXTX6N200P3HV

ManufacturerIXYS

Description2000V TO 3000V POLAR3 POWER MOSF

DatasheetIXTX6N200P3HV

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 2000V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV

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IXTX6N200P3HV - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTX6N200P3HV
Standard Package	30
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2000V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	143nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 25V
FET Feature	-
Power Dissipation (Max)	960W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247PLUS-HV
Package / Case	TO-247-3 Variant

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IXTX6N200P3HV - Tags

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