Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR401DP-T1-GE3

SIR401DP-T1-GE3

SIR401DP-T1-GE3

Part NumberSIR401DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 50A PPAK SO-8

DatasheetSIR401DP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 50A (Tc) 5W (Ta), 39W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR401DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR401DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR401DP-T1-GE3.
We are offering SIR401DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR401DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR401DP-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	310nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	9080pF @ 10V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR401DP-T1-GE3 - Related Products

	BSL307SPH6327XTSA1	Infineon Technologies, P-Channel 30V 5.5A (Ta) 2W (Ta) Surface Mount PG-TSOP-6-1, OptiMOS™	View
	SISS23DN-T1-GE3	Vishay Siliconix, P-Channel 20V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®	View
	PMV48XPAR	Nexperia USA Inc., P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB,	View
	ZXMP10A17E6QTA	Diodes Incorporated, P-Channel 100V 1.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	NVTFS5124PLTAG	ON Semiconductor, P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IRFR9120TRPBF	Vishay Siliconix, P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SSM3J35CTC,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII	View
	NVATS5A106PLZT4G	ON Semiconductor, P-Channel 40V 33A (Ta) 48W (Tc) Surface Mount ATPAK,	View
	MCH6342-TL-W	ON Semiconductor, P-Channel 30V 4.5A (Ta) 1.5W (Ta) Surface Mount SC-88FL/MCPH6,	View
	TP0610K-T1-E3	Vishay Siliconix, P-Channel 60V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRF9530STRLPBF	Vishay Siliconix, P-Channel 100V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View
	SI4435FDY-T1-GE3	Vishay Siliconix, P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC, TrenchFET® Gen III	View

SIR401DP-T1-GE3 - Tags

SIR401DP-T1-GE3 SIR401DP-T1-GE3 PDF SIR401DP-T1-GE3 datasheet SIR401DP-T1-GE3 specification SIR401DP-T1-GE3 image SIR401DP-T1-GE3 India Renesas Electronics India SIR401DP-T1-GE3 buy SIR401DP-T1-GE3 SIR401DP-T1-GE3 price SIR401DP-T1-GE3 distributor SIR401DP-T1-GE3 supplier SIR401DP-T1-GE3 wholesales