Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2333DS-T1-E3

SI2333DS-T1-E3

SI2333DS-T1-E3

Part NumberSI2333DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 4.1A SOT23-3

DatasheetSI2333DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2333DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2333DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2333DS-T1-E3.
We are offering SI2333DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2333DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2333DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 6V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2333DS-T1-E3 - Related Products

	SI2333DDS-T1-GE3	Vishay Siliconix, P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	FQD7P06TM	ON Semiconductor, P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®	View
	SIA483DJ-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	FDMC6679AZ	ON Semiconductor, P-Channel 30V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SPP80P06PHXKSA1	Infineon Technologies, P-Channel 60V 80A (Tc) 340W (Tc) Through Hole PG-TO220-3-1, SIPMOS®	View
	TSM2323CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	TP0610K-T1-E3	Vishay Siliconix, P-Channel 60V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	DMP3007SFG-7	Diodes Incorporated, P-Channel 30V 70A (Tc) 2.8W (Ta) Surface Mount PowerDI3333-8,	View
	IRFU9020PBF	Vishay Siliconix, P-Channel 50V 9.9A (Tc) 42W (Tc) Through Hole TO-251AA,	View
	RE1C001ZPTL	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),	View
	SI7113ADN-T1-GE3	Vishay Siliconix, P-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI2365EDS-T1-GE3	Vishay Siliconix, P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®	View

SI2333DS-T1-E3 - Tags

SI2333DS-T1-E3 SI2333DS-T1-E3 PDF SI2333DS-T1-E3 datasheet SI2333DS-T1-E3 specification SI2333DS-T1-E3 image SI2333DS-T1-E3 India Renesas Electronics India SI2333DS-T1-E3 buy SI2333DS-T1-E3 SI2333DS-T1-E3 price SI2333DS-T1-E3 distributor SI2333DS-T1-E3 supplier SI2333DS-T1-E3 wholesales