Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHP11N80E-GE3

SIHP11N80E-GE3

SIHP11N80E-GE3

Part NumberSIHP11N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 12A TO220AB

DatasheetSIHP11N80E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB

To learn about the specification of SIHP11N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHP11N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHP11N80E-GE3.
We are offering SIHP11N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHP11N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHP11N80E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 100V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

SIHP11N80E-GE3 - Related Products

	IPD60R280P7SAUMA1	Infineon Technologies, N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	BSC22DN20NS3GATMA1	Infineon Technologies, N-Channel 200V 7A (Tc) 34W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	APT5010LLLG	Microsemi Corporation, N-Channel 500V 46A (Tc) 520W (Tc) Through Hole TO-264 [L], POWER MOS 7®	View
	SIR180DP-T1-RE3	Vishay Siliconix, N-Channel 60V 32.4A (Ta), 60A (Tc) 5.4W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	BSC072N08NS5ATMA1	Infineon Technologies, N-Channel 80V 74A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	IRFU3410PBF	Infineon Technologies, N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	RFD14N05LSM	ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-252AA,	View
	IRFH5004TRPBF	Infineon Technologies, N-Channel 40V 28A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	BUK7Y3R5-40E,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	FDBL0630N150	ON Semiconductor, N-Channel 150V 169A (Tc) 500W (Tj) Surface Mount 8-HPSOF, PowerTrench®	View
	SUG80050E-GE3	Vishay Siliconix, N-Channel 150V 100A (Tc) 500W (Tc) Through Hole TO-247AC, ThunderFET®	View
	NDS7002A	ON Semiconductor, N-Channel 60V 280mA (Ta) 300mW (Ta) Surface Mount SOT-23 (TO-236AB),	View

SIHP11N80E-GE3 - Tags

SIHP11N80E-GE3 SIHP11N80E-GE3 PDF SIHP11N80E-GE3 datasheet SIHP11N80E-GE3 specification SIHP11N80E-GE3 image SIHP11N80E-GE3 India Renesas Electronics India SIHP11N80E-GE3 buy SIHP11N80E-GE3 SIHP11N80E-GE3 price SIHP11N80E-GE3 distributor SIHP11N80E-GE3 supplier SIHP11N80E-GE3 wholesales