SIHP11N80E-GE3
SIHP11N80E-GE3
Part Number SIHP11N80E-GE3
Description MOSFET N-CH 800V 12A TO220AB
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB
To learn about the specification of SIHP11N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHP11N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHP11N80E-GE3.
We are offering SIHP11N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHP11N80E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHP11N80E
Standard Package 1000
Manufacturer Vishay Siliconix
Series E
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
SIHP11N80E-GE3 - Related ProductsMore >>
DMN65D8LQ-7
Diodes Incorporated, N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23,
View
SSM3K7002KF,LF
Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 270mW (Ta) Surface Mount S-Mini, U-MOSVII-H
View
STP24N60DM2
STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-220, FDmesh™ II Plus
View
APT38F80L
Microsemi Corporation, N-Channel 800V 41A (Tc) 1040W (Tc) Through Hole TO-264 [L], POWER MOS 8™
View
MVMBF0201NLT1G
ON Semiconductor, N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,
View
SI3404-TP
Micro Commercial Co, N-Channel 30V 5.8A 350mW Surface Mount SOT-23,
View
PSMN2R2-40BS,118
Nexperia USA Inc., N-Channel 40V 100A (Tc) 306W (Tc) Surface Mount D2PAK,
View
SSM3K15AFS,LF
Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount SSM, U-MOSIII
View
BSC0902NSIATMA1
Infineon Technologies, N-Channel 30V 23A (Ta), 100A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
View
TSM230N06CP ROG
Taiwan Semiconductor Corporation, N-Channel 60V 34A (Tc) 104W (Tc) Surface Mount TO-252, (D-Pak),
View
SIHF28N60EF-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 39W (Tc) Through Hole TO-220 Full Pack,
View
IPP12CN10LGXKSA1
Infineon Technologies, N-Channel 100V 69A (Tc) 125W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
SIHP11N80E-GE3 - Tags