SIHP11N80E-GE3
SIHP11N80E-GE3
Part Number SIHP11N80E-GE3
Description MOSFET N-CH 800V 12A TO220AB
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB
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SIHP11N80E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHP11N80E
Standard Package 1000
Manufacturer Vishay Siliconix
Series E
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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