SIHP11N80E-GE3
SIHP11N80E-GE3
Part Number SIHP11N80E-GE3 Description MOSFET N-CH 800V 12A TO220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB
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SIHP11N80E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHP11N80E Standard Package 1000 Manufacturer Vishay Siliconix Series E Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V FET Feature - Power Dissipation (Max) 179W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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