Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3410DV-T1-GE3

SI3410DV-T1-GE3

SI3410DV-T1-GE3

Part NumberSI3410DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 8A 6-TSOP

DatasheetSI3410DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3410DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3410DV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3410DV-T1-GE3.
We are offering SI3410DV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3410DV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3410DV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1295pF @ 15V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3410DV-T1-GE3 - Related Products

	SIHB22N60E-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D2PAK,	View
	PSMN1R0-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 160W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FDS6670AS	ON Semiconductor, N-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®, SyncFET™	View
	IPD096N08N3GATMA1	Infineon Technologies, N-Channel 80V 73A (Tc) 100W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	BSC097N06NSATMA1	Infineon Technologies, N-Channel 60V 46A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IRFB7437PBF	Infineon Technologies, N-Channel 40V 195A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	SIHB180N60E-GE3	Vishay Siliconix, N-Channel 600V 19A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263),	View
	IPA60R650CEXKSA1	Infineon Technologies, N-Channel 600V 7A (Tc) 28W (Tc) Through Hole PG-TO220-FP, CoolMOS™ CE	View
	CSD18509Q5B	Texas Instruments, N-Channel 40V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	TK39N60W5,S1VF	Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV	View
	IPB020NE7N3GATMA1	Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	CSD18510KTT	Texas Instruments, N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3, NexFET™	View

SI3410DV-T1-GE3 - Tags

SI3410DV-T1-GE3 SI3410DV-T1-GE3 PDF SI3410DV-T1-GE3 datasheet SI3410DV-T1-GE3 specification SI3410DV-T1-GE3 image SI3410DV-T1-GE3 India Renesas Electronics India SI3410DV-T1-GE3 buy SI3410DV-T1-GE3 SI3410DV-T1-GE3 price SI3410DV-T1-GE3 distributor SI3410DV-T1-GE3 supplier SI3410DV-T1-GE3 wholesales