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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx65R110CFDA
Standard Package 1000
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
FET Feature -
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CSD16301Q2
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IPD30N06S2L23ATMA3
Infineon Technologies, N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11, OptiMOS™
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IXFH80N65X2
IXYS, N-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-247, HiPerFET™
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