IPB65R110CFDAATMA1
IPB65R110CFDAATMA1
Part Number IPB65R110CFDAATMA1
Description MOSFET N-CH TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 31.2A (Tc) 277.8W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of IPB65R110CFDAATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB65R110CFDAATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB65R110CFDAATMA1.
We are offering IPB65R110CFDAATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB65R110CFDAATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx65R110CFDA
Standard Package 1000
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
FET Feature -
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R110CFDAATMA1 - Related ProductsMore >>
BSP129H6906XTSA1
Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS™
View
SQJ860EP-T1_GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
SI7336ADP-T1-GE3
Vishay Siliconix, N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FDS6670A
ON Semiconductor, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
FDMC007N08LCDC
ON Semiconductor, N-Channel 80V 64A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3), PowerTrench®
View
ZXMN2B03E6TA
Diodes Incorporated, N-Channel 20V 4.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
STL7N6F7
STMicroelectronics, N-Channel 60V 7A (Tc) 2.4W (Ta) Surface Mount PowerFlat™ (2x2), STripFET™
View
CSD19538Q2
Texas Instruments, N-Channel 100V 14.4A (Ta) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2), NexFET™
View
RTF025N03FRATL
Rohm Semiconductor, N-Channel 30V 2.5A (Ta) 800mW (Ta) Surface Mount TUMT3, Automotive, AEC-Q101
View
TK8A60W5,S5VX
Toshiba Semiconductor and Storage, N-Channel 600V 8A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV
View
SI7738DP-T1-GE3
Vishay Siliconix, N-Channel 150V 30A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPB60R280C6ATMA1
Infineon Technologies, N-Channel 600V 13.8A (Tc) 104W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
View
IPB65R110CFDAATMA1 - Tags