Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

Part NumberSIHJ10N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 10A POWERPAKSO

DatasheetSIHJ10N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 10A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ10N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ10N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ10N60E-T1-GE3.
We are offering SIHJ10N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ10N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ10N60E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	784pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	8-PowerTDFN

SIHJ10N60E-T1-GE3 - Related Products

	FQB4N80TM	ON Semiconductor, N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	IPD110N12N3GATMA1	Infineon Technologies, N-Channel 120V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	STF6N62K3	STMicroelectronics, N-Channel 620V 5.5A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH3™	View
	BS870-7-F	Diodes Incorporated, N-Channel 60V 250mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View
	BSC022N04LSATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	SIRA26DP-T1-RE3	Vishay Siliconix, N-Channel 25V 60A (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	PSMN1R1-25YLC,115	Nexperia USA Inc., N-Channel 25V 100A (Tc) 215W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	R6012FNX	Rohm Semiconductor, N-Channel 600V 12A (Tc) 50W (Tc) Through Hole TO-220FM,	View
	TSM300NB06CR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 6A (Ta), 27A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount 8-PDFN (5x6),	View
	SIDR626DP-T1-GE3	Vishay Siliconix, N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	IPW60R125C6FKSA1	Infineon Technologies, N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	IPA60R099C6XKSA1	Infineon Technologies, N-Channel 600V 37.9A (Tc) 35W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View

SIHJ10N60E-T1-GE3 - Tags

SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 PDF SIHJ10N60E-T1-GE3 datasheet SIHJ10N60E-T1-GE3 specification SIHJ10N60E-T1-GE3 image SIHJ10N60E-T1-GE3 India Renesas Electronics India SIHJ10N60E-T1-GE3 buy SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 price SIHJ10N60E-T1-GE3 distributor SIHJ10N60E-T1-GE3 supplier SIHJ10N60E-T1-GE3 wholesales