IRFU3410PBF
IRFU3410PBF
Part Number IRFU3410PBF Description MOSFET N-CH 100V 31A I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251)
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IRFU3410PBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR/IRFU3410PbF Standard Package 3000 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 18A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V FET Feature - Power Dissipation (Max) 3W (Ta), 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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