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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB45N40DM2AG
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPP032N06N3GXKSA1
Infineon Technologies, N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO220-3, OptiMOS™
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SIHP050N60E-GE3
Vishay Siliconix, N-Channel 600V 51A (Tc) 278W (Tc) Through Hole TO-220AB,
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BUK7Y7R8-80EX
Nexperia USA Inc., N-Channel 80V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8,
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FDPF18N50
ON Semiconductor, N-Channel 500V 18A (Tc) 38.5W (Tc) Through Hole TO-220F, UniFET™
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SQD50N05-11L_GE3
Vishay Siliconix, N-Channel 50V 50A (Tc) 75W (Tc) Surface Mount TO-252AA, TrenchFET®
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IPP057N06N3GXKSA1
Infineon Technologies, N-Channel 60V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3, OptiMOS™
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FCD4N60TM
ON Semiconductor, N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount D-Pak, SuperFET™
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IPB60R099C6ATMA1
Infineon Technologies, N-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
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IXTH1N450HV
IXYS, N-Channel 4500V 1A (Tc) 520W (Tc) Through Hole TO-247HV,
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SQR50N04-3M8_GE3
Vishay Siliconix, N-Channel 40V 50A (Tc) 136W (Tc) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, TrenchFET®
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IPP60R125C6XKSA1
Infineon Technologies, N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO220-3, CoolMOS™
View
TPN2R203NC,L1Q
Toshiba Semiconductor and Storage, N-Channel 30V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII
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