SIHH11N60EF-T1-GE3
SIHH11N60EF-T1-GE3
Part Number SIHH11N60EF-T1-GE3
Description MOSFET N-CH 600V 11A POWERPAK8X8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 11A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8
To learn about the specification of SIHH11N60EF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH11N60EF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH11N60EF-T1-GE3.
We are offering SIHH11N60EF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHH11N60EF-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHH11N60EF
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 357mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1078pF @ 100V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
SIHH11N60EF-T1-GE3 - Related ProductsMore >>
SIRA28BDP-T1-GE3
Vishay Siliconix, N-Channel 30V 18A (Ta), 38A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
PMV40UN2R
Nexperia USA Inc., N-Channel 30V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB,
View
AO4492
Alpha & Omega Semiconductor Inc., N-Channel 30V 14A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
View
STF6N60M2
STMicroelectronics, N-Channel 600V 4.5A (Ta) 20W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
View
STB32NM50N
STMicroelectronics, N-Channel 500V 22A (Tc) 190W (Tc) Surface Mount TO-263 (D²Pak), MDmesh™ II
View
RSR010N10TL
Rohm Semiconductor, N-Channel 100V 1A (Ta) 540mW (Ta) Surface Mount TSMT3,
View
FDP8N50NZ
ON Semiconductor, N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3, UniFET™
View
IRL40SC228
Infineon Technologies, N-Channel 40V 557A (Tc) 416W (Tc) Surface Mount D2PAK (7-Lead), StrongIRFET™
View
IXFH340N075T2
IXYS, N-Channel 75V 340A (Tc) 935W (Tc) Through Hole TO-247AD (IXFH), GigaMOS™, HiPerFET™, TrenchT2™
View
TSM4424CS RVG
Taiwan Semiconductor Corporation, N-Channel 20V 8A (Tc) 2.5W (Ta) Surface Mount 8-SOP,
View
DMN3016LFDF-7
Diodes Incorporated, N-Channel 30V 12A (Ta) 2.02W (Ta) Surface Mount U-DFN2020-6 (Type F),
View
PMCM6501VNEZ
Nexperia USA Inc., N-Channel 12V 7.3A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x.98),
View
SIHH11N60EF-T1-GE3 - Tags