Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG33N65EF-GE3

SIHG33N65EF-GE3

SIHG33N65EF-GE3

Part NumberSIHG33N65EF-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 31.6A TO-247AC

DatasheetSIHG33N65EF

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 31.6A (Tc) 313W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG33N65EF-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG33N65EF-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG33N65EF-GE3.
We are offering SIHG33N65EF-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG33N65EF-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG33N65EF
Standard Package	500
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	31.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	109mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	171nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4026pF @ 100V
FET Feature	-
Power Dissipation (Max)	313W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG33N65EF-GE3 - Related Products

	PMXB40UNEZ	Nexperia USA Inc., N-Channel 12V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3,	View
	APT10045JLL	Microsemi Corporation, N-Channel 1000V 21A (Tc) 460W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®	View
	SI7858ADP-T1-GE3	Vishay Siliconix, N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMN3025LFV-13	Diodes Incorporated, N-Channel 30V 25A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8 (Type UX), Automotive, AEC-Q101	View
	SI7386DP-T1-GE3	Vishay Siliconix, N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	APT50M65JLL	Microsemi Corporation, N-Channel 500V 58A (Tc) 520W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®	View
	FDMC86570L	ON Semiconductor, N-Channel 60V 18A (Ta), 56A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33, PowerTrench®	View
	IRF3808PBF	Infineon Technologies, N-Channel 75V 140A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®	View
	SSM3K347R,LF	Toshiba Semiconductor and Storage, N-Channel 38V 2A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSIV	View
	STLD200N4F6AG	STMicroelectronics, N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount PowerFlat™ (5x6) Dual Side, Automotive, AEC-Q101, STripFET™ F6	View
	IXTP60N10T	IXYS, N-Channel 100V 60A (Tc) 176W (Tc) Through Hole TO-220AB, TrenchMV™	View
	SSM6K504NU,LF	Toshiba Semiconductor and Storage, N-Channel 30V 9A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII	View

SIHG33N65EF-GE3 - Tags

SIHG33N65EF-GE3 SIHG33N65EF-GE3 PDF SIHG33N65EF-GE3 datasheet SIHG33N65EF-GE3 specification SIHG33N65EF-GE3 image SIHG33N65EF-GE3 India Renesas Electronics India SIHG33N65EF-GE3 buy SIHG33N65EF-GE3 SIHG33N65EF-GE3 price SIHG33N65EF-GE3 distributor SIHG33N65EF-GE3 supplier SIHG33N65EF-GE3 wholesales