Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG33N65E-GE3

SIHG33N65E-GE3

SIHG33N65E-GE3

Part NumberSIHG33N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 32.4A TO-247AC

DatasheetSIHG33N65E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG33N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG33N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG33N65E-GE3.
We are offering SIHG33N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG33N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG33N65E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	32.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	105mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	173nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4040pF @ 100V
FET Feature	-
Power Dissipation (Max)	313W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG33N65E-GE3 - Related Products

	FCH072N60F	ON Semiconductor, N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-247-3, FRFET®, SuperFET® II	View
	NVMFS4C05NT3G	ON Semiconductor, N-Channel 30V 24.7A (Ta), 116A (Tc) 3.61W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	RJU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	DMT6015LPS-13	Diodes Incorporated, N-Channel 60V 10.6A (Ta), 31A (Tc) 1.16W (Ta) Surface Mount PowerDI5060-8,	View
	STD6NF10T4	STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™	View
	STH315N10F7-6	STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6, DeepGATE™, STripFET™ VII	View
	SK8403180L	Panasonic Electronic Components, N-Channel 30V 12A (Ta), 39A (Tc) 2W (Ta), 19W (Tc) Surface Mount HSSO8-F1-B,	View
	RJU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	IRF730STRLPBF	Vishay Siliconix, N-Channel 400V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
	TSM7ND60CI	Taiwan Semiconductor Corporation, N-Channel 600V 7A (Tc) 50W (Tc) Through Hole ITO-220,	View
	STS26N3LLH6	STMicroelectronics, N-Channel 30V 26A (Tc) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ VI	View
	DMT6009LFG-7	Diodes Incorporated, N-Channel 60V 11A (Ta), 34A (Tc) 2.08W (Ta), 19.2W (Tc) Surface Mount PowerDI3333-8,	View

SIHG33N65E-GE3 - Tags

SIHG33N65E-GE3 SIHG33N65E-GE3 PDF SIHG33N65E-GE3 datasheet SIHG33N65E-GE3 specification SIHG33N65E-GE3 image SIHG33N65E-GE3 India Renesas Electronics India SIHG33N65E-GE3 buy SIHG33N65E-GE3 SIHG33N65E-GE3 price SIHG33N65E-GE3 distributor SIHG33N65E-GE3 supplier SIHG33N65E-GE3 wholesales