SIHF6N65E-GE3
SIHF6N65E-GE3
Part Number SIHF6N65E-GE3
Description MOSFET N-CH 650V 6A TO220FP
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack
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SIHF6N65E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHF6N65E
Standard Package 1000
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 100V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
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