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FDA16N50LDTU

FDA16N50LDTU

Part NumberFDA16N50LDTU

ManufacturerON Semiconductor

DescriptionUNIFET N-CHANNEL 500V MOSFET LDT

DatasheetFDA16N50LDTU

Package / CaseTO-3P-3, SC-65-3 (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN (L-Forming)

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FDA16N50LDTU - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDA16N50LDTU
Standard Package	360
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1945pF @ 25V
FET Feature	-
Power Dissipation (Max)	205W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PN (L-Forming)
Package / Case	TO-3P-3, SC-65-3 (Formed Leads)

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