Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTH30N60L2

IXTH30N60L2

IXTH30N60L2

Part NumberIXTH30N60L2

ManufacturerIXYS

DescriptionMOSFET N-CH 600V 30A TO-247

DatasheetIXT(H,Q,T)30N60L2

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)

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IXTH30N60L2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(H,Q,T)30N60L2
Standard Package	30
Manufacturer	IXYS
Series	Linear L2™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10700pF @ 25V
FET Feature	-
Power Dissipation (Max)	540W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3

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IXTH30N60L2 - Tags

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