Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB6N65E-GE3

SIHB6N65E-GE3

SIHB6N65E-GE3

Part NumberSIHB6N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 7A D2PAK

DatasheetSIHB6N65E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB6N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB6N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB6N65E-GE3.
We are offering SIHB6N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB6N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB6N65E-GE3
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB6N65E-GE3 - Related Products

	AOT410L	Alpha & Omega Semiconductor Inc., N-Channel 100V 12A (Ta), 150A (Tc) 1.9W (Ta), 333W (Tc) Through Hole TO-220, SDMOS™	View
	SIS476DN-T1-GE3	Vishay Siliconix, N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXFK150N30P3	IXYS, N-Channel 300V 150A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, Polar3™	View
	IXTB62N50L	IXYS, N-Channel 500V 62A (Tc) 800W (Tc) Through Hole PLUS264™,	View
	IPB019N06L3GATMA1	Infineon Technologies, N-Channel 60V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	NVF3055-100T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101	View
	RU1J002YNTCL	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount UMT3F,	View
	DMN63D8L-7	Diodes Incorporated, N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	CSD18540Q5B	Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	FQD10N20LTM	ON Semiconductor, N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak), QFET®	View
	FDD8780	ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	IPDD60R050G7XTMA1	Infineon Technologies, N-Channel 600V 47A (Tc) 278W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View

SIHB6N65E-GE3 - Tags

SIHB6N65E-GE3 SIHB6N65E-GE3 PDF SIHB6N65E-GE3 datasheet SIHB6N65E-GE3 specification SIHB6N65E-GE3 image SIHB6N65E-GE3 India Renesas Electronics India SIHB6N65E-GE3 buy SIHB6N65E-GE3 SIHB6N65E-GE3 price SIHB6N65E-GE3 distributor SIHB6N65E-GE3 supplier SIHB6N65E-GE3 wholesales