Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB6N65E-GE3

SIHB6N65E-GE3

SIHB6N65E-GE3

Part NumberSIHB6N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 7A D2PAK

DatasheetSIHB6N65E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB6N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB6N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB6N65E-GE3.
We are offering SIHB6N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB6N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB6N65E-GE3
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB6N65E-GE3 - Related Products

	BUK964R8-60E,118	Nexperia USA Inc., N-Channel 60V 100A (Tc) 234W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	FQP2N40-F080	ON Semiconductor, N-Channel 400V 1.8A (Tc) 40W (Ta) Through Hole TO-220-3, QFET®	View
	FQB55N10TM	ON Semiconductor, N-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	FDP12N60NZ	ON Semiconductor, N-Channel 600V 12A (Tc) 240W (Tc) Through Hole TO-220-3, UniFET-II™	View
	IRFH5010TRPBF	Infineon Technologies, N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	BUK962R5-60E,118	Nexperia USA Inc., N-Channel 60V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	NTMFS5C430NT1G	ON Semiconductor, N-Channel 40V 35A (Ta), 185A (Tc) 3.8W (Ta), 106W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STH260N6F6-2	STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VI	View
	SIHH24N65E-T1-GE3	Vishay Siliconix, N-Channel 650V 23A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	SI2314EDS-T1-E3	Vishay Siliconix, N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRLZ34PBF	Vishay Siliconix, N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB,	View
	IRFZ46NSTRLPBF	Infineon Technologies, N-Channel 55V 53A (Tc) 3.8W (Ta), 107W (Tc) Surface Mount D2PAK, HEXFET®	View

SIHB6N65E-GE3 - Tags

SIHB6N65E-GE3 SIHB6N65E-GE3 PDF SIHB6N65E-GE3 datasheet SIHB6N65E-GE3 specification SIHB6N65E-GE3 image SIHB6N65E-GE3 India Renesas Electronics India SIHB6N65E-GE3 buy SIHB6N65E-GE3 SIHB6N65E-GE3 price SIHB6N65E-GE3 distributor SIHB6N65E-GE3 supplier SIHB6N65E-GE3 wholesales