STB26N60M2

Part NumberSTB26N60M2

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STB26N60M2 Datasheet
Standard Package	1000
Manufacturer	STMicroelectronics
Series	MDmesh™ M2
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1360pF @ 100V
FET Feature	-
Power Dissipation (Max)	169W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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ZXM61N03FTA	Diodes Incorporated, N-Channel 30V 1.4A (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
FDB14AN06LA0-F085	ON Semiconductor, N-Channel 60V 67A (Tc) 125W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View

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